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PD - 91670
IRF1010E
HEXFET(R) Power MOSFET
l l l l l l
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated
D
VDSS = 60V RDS(on) = 12m
G S
ID = 84A
Description
Advanced HEXFET(R) Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew
Max.
84 59 330 200 1.4 20 50 17 4.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m)
Units
A W W/C V A mJ V/ns C
Thermal Resistance
Parameter
RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Typ.
--- 0.50 ---
Max.
0.75 --- 62
Units
C/W
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1
3/16/01
IRF1010E
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss EAS
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Single Pulse Avalanche Energy
Min. 60 --- --- 2.0 69 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 12 m VGS = 10V, ID = 50A 4.0 V VDS = VGS, ID = 250A --- S VDS = 25V, ID = 50A 25 VDS = 60V, VGS = 0V A 250 VDS = 48V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 130 ID = 50A 28 nC VDS = 48V 44 VGS = 10V, See Fig. 6 and 13 --- VDD = 30V --- ID = 50A ns --- RG = 3.6 --- VGS = 10V, See Fig. 10 Between lead, 4.5 --- 6mm (0.25in.) nH G from package 7.5 --- and center of die contact 3210 --- VGS = 0V 690 --- VDS = 25V 140 --- pF = 1.0MHz, See Fig. 5 1180320 mJ IAS = 50A, L = 260H
Typ. --- 0.064 --- --- --- --- --- --- --- --- --- --- 12 78 48 53
D
S
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Qrr ton Notes:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol --- --- 84 showing the A G integral reverse --- --- 330 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 50A, VGS = 0V --- 73 110 ns TJ = 25C, IF = 50A --- 220 330 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Pulse width 400s; duty cycle 2%. This is a typical value at device destruction and represents
operation outside rated limits.
Starting TJ = 25C, L = 260H
RG = 25, IAS = 50A, VGS =10V (See Figure 50A, ISD 12) di/dt 230A/s, VDD V(BR)DSS, TJ 175C
This is a calculated value limited to TJ = 175C . Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
2
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IRF1010E
1000
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
1000
I D , Drain-to-Source Current (A)
100
4.5V
10
I D , Drain-to-Source Current (A)
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
100
4.5V
1 0.1
20s PULSE WIDTH TJ = 25 C
1 10 100
10 0.1
20s PULSE WIDTH TJ = 175 C
1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
3.0
I D = 84A
R DS(on) , Drain-to-Source On Resistance (Normalized)
I D , Drain-to-Source Current (A)
2.5
TJ = 25 C TJ = 175 C
2.0
100
1.5
1.0
0.5
10 4 5 6 7
V DS = 25V 20s PULSE WIDTH 8 9 10 11
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160 180
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRF1010E
6000 20 VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C gs ds SHORTED Crss = C gd Coss = C + Cgd ds
ID = 50A VDS = 48V VDS = 30V VDS = 12V
5000
VGS , Gate-to-Source Voltage (V)
16
C, Capacitance(pF)
4000
Ciss
12
3000
Coss
2000
8
1000
Crss
4
0 1 10 100
0 0 20 40 60
FOR TEST CIRCUIT SEE FIGURE 13
80 100 120 140
VDS, Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000 OPERATION IN THIS AREA LIMITED BY R DS (on)
ISD , Reverse Drain Current (A)
100
TJ = 175 C
ID, Drain-to-Source Current (A)
100 100sec
10
TJ = 25 C
1
10
1msec
0.1 0.0
V GS = 0 V
0.6 1.2 1.8 2.4
1 1
Tc = 25C Tj = 175C Single Pulse 10
10msec 100 1000
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRF1010E
100
LIMITED BY PACKAGE
80
VDS VGS RG
RD
D.U.T.
+
I D , Drain Current (A)
-VDD
60
VGS
Pulse Width 1 s Duty Factor 0.1 %
40
Fig 10a. Switching Time Test Circuit
20
VDS 90%
0 25 50 75 100 125 150 175
TC , Case Temperature
( C)
10% VGS
td(on) tr t d(off) tf
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10b. Switching Time Waveforms
1
Thermal Response (Z thJC )
D = 0.50
0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1
0.01 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRF1010E
800
EAS , Single Pulse Avalanche Energy (mJ)
1 5V
TOP BOTTOM
600
VDS
L
D R IV E R
ID 20A 35A 50A
RG
VV 2 0GS
D .U .T IA S tp 0 .0 1
+ - VD D
A
400
Fig 12a. Unclamped Inductive Test Circuit
V (B R )D SS tp
200
0 25 50 75 100 125 150 175
Starting TJ , Junction Temperature ( C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
VGS
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
IG
ID
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
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IRF1010E
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T* Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
+
-
+
RG VGS * dv/dt controlled by RG * ISD controlled by Duty Factor "D" * D.U.T. - Device Under Test
+ VDD
*
Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive P.W. Period D=
P.W. Period
[VGS=10V ] ***
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
[VDD]
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
[ ISD ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For N-channel HEXFET(R) power MOSFETs
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7
IRF1010E
Package Outline
TO-220AB Dimensions are shown in millimeters (inches)
2.87 (.11 3) 2.62 (.10 3) 10 .54 (.4 15) 10 .29 (.4 05) 3 .7 8 (.149 ) 3 .5 4 (.139 ) -A 6.47 (.25 5) 6.10 (.24 0) -B 4.69 ( .18 5 ) 4.20 ( .16 5 ) 1 .32 (.05 2) 1 .22 (.04 8)
4 1 5.24 (.60 0) 1 4.84 (.58 4)
1.15 (.04 5) M IN 1 2 3
L E A D A S S IG NM E NT S 1 - GATE 2 - D R A IN 3 - S O U RC E 4 - D R A IN
1 4.09 (.55 5) 1 3.47 (.53 0)
4.06 (.16 0) 3.55 (.14 0)
3X 3X 1 .4 0 (.0 55 ) 1 .1 5 (.0 45 )
0.93 (.03 7) 0.69 (.02 7) M BAM
3X
0.55 (.02 2) 0.46 (.01 8)
0 .3 6 (.01 4)
2.54 (.10 0) 2X N O TE S : 1 D IM E N S IO N IN G & TO L E R A N C ING P E R A N S I Y 1 4.5M , 1 9 82. 2 C O N TR O L LIN G D IM E N S IO N : IN C H
2 .92 (.11 5) 2 .64 (.10 4)
3 O U T LIN E C O N F O R M S TO JE D E C O U T LIN E TO -2 20 A B . 4 H E A TS IN K & LE A D M E A S U R E M E N T S D O N O T IN C LU DE B U R R S .
Part Marking Information
TO-220AB
E X A M P L E : TH IS IS A N IR F1 0 1 0 W IT H A S S E M B L Y LOT C ODE 9B1M
A
IN TE R N A TIO N A L R E C TIF IE R LOGO ASSEMBLY LOT CO DE
PART NU MBER IR F 10 1 0 9246 9B 1M
D A TE C O D E (Y Y W W ) YY = YEAR W W = W EEK
Data and specifications subject to change without notice. This product has been designed and qualified for the automotive [Q101] market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 3/01
8
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